STD12NE06 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET

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STD12NE06
N - CHANNEL 60V - 0.08Ω - 12A - IPAK/DPAK
SINGLE FEATURE SIZE™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STD12NE06
60 V
< 0.10 Ω
12 A
s TYPICAL RDS(on) = 0.08 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
V_{G S}
I_D
I_D
I_DM(•)
P_tot
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
T_stg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
Va l u e
Unit
60
V
60
V
± 20
V
12
A
8
A
48
A
35
0.23
W
W /^o C
6
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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