STD10N60DM2 Datasheet, PDF (1/14 Pages) STMicroelectronics – Zener-protected

STD10N60DM2
N-channel 600 V, 0.440 Ω typ., 8 A MDmesh™ DM2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @
TJmax.
RDS(on)
max.
ID
PTOT
STD10N60DM2 650 V 0.530 Ω 8 A 109 W
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STD10N60DM2
Table 1: Device summary
Marking
Package
10N60DM2
DPAK
Packing
Tape and reel
June 2016
DocID029382 Rev 1
This is information on a product in full production.
1/14
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