STB37N60DM2AG Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge and input capacitance

STB37N60DM2AG
Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
Features
Order code
STB37N60DM2AG
VDS
600 V
RDS(on) max.
0.110 Ω
ID
28 A
PTOT
210 W
3
1
D2PAK
Figure 1: Internal schematic diagram
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Order code
STB37N60DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
37N60DM2
D²PAK
Tape and reel
August 2015
DocID028271 Rev 1
This is information on a product in full production.
1/15
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