STB23N80K5 Datasheet, PDF (1/15 Pages) STMicroelectronics – Ultra low gate charge

STB23N80K5
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STB23N80K5 800 V 0.28 Ω 16 A 190 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB23N80K5
Table 1: Device summary
Marking
Package
23N80K5
D²PAK
Packing
Tape and reel
August 2015
DocID028291 Rev 1
This is information on a product in full production.
1/15
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