PD57060 Datasheet, PDF (1/12 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD57060
PD57060S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 60 W with 14.3 dB gain @ 945 MHz /
28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD57060S’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
ORDER CODE
PD57060
BRANDING
PD57060
PowerSO-10RF
(Straight lead)
ORDER CODE
PD57060S
BRANDING
PD57060S
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 °C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA (T_CASE = 70 °C)
R_th(j-c) Junction -Case Thermal Resistance
March, 21 2003
Value
65
± 20
7
79
165
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
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