M65KA128AL Datasheet, PDF (1/53 Pages) STMicroelectronics – 128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs

M65KA128AL
128Mbit (4 Banks x 2M x 16)
1.8V Supply, Low Power SDRAMs
Feature summary
■ 128Mbit Synchronous Dynamic RAM
– Organized as 4 Banks of 2 MWords, each
16 bits wide
■ Supply Voltage
– V_DD = 1.65V to 1.95V
– V_DDQ = 1.65 to 1.95V for Input/Output
■ Synchronous Burst Read and Write
– Fixed Burst lengths: 1, 2, 4, 8 words or full
Page
– Burst Types: Sequential and Interleaved.
– Maximum clock frequency: 104MHz
– CAS Latency 2, 3
■ Automatic Precharge
■ Low Power features:
– PASR (Partial Array Self Refresh),
– Automatic TCSR (Temperature
Compensated Self Refresh)
– Driver Strength (DS)
– Deep Power-Down Mode
■ Delivery form: Unsawn Wafer
■ Auto Refresh and Self Refresh
■ LVCMOS Interface Compatible with
Multiplexed Addressing
■ Operating temperature
– –25°C to +90°C
Wafer
The M65KA128AL is only available as part of a Multi-Chip Package Product.
April 2006
Rev 3
1/53
www.st.com
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