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M59MR032C Datasheet, PDF (1/49 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory | |||
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M59MR032C
M59MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s SUPPLY VOLTAGE
â VDD = VDDQ = 1.65V to 2.0V for Program,
Erase and Read
â VPP = 12V for fast Program (optional)
s MULTIPLEXED ADDRESS/DATA
s SYNCHRONOUS / ASYNCHRONOUS READ
â Configurable Burst mode Read
â Page mode Read (4 Words Page)
â Random Access: 100ns
s PROGRAMMING TIME
â 10µs by Word typical
â Double Word Programming Option
s MEMORY BLOCKS
â Dual Bank Memory Array: 8 Mbit - 24 Mbit
â Parameter Blocks (Top or Bottom location)
s DUAL BANK OPERATIONS
â Read within one Bank while Program or
Erase within the other
â No delay between Read and Write operations
s BLOCK PROTECTION/UNPROTECTION
â All Blocks protected at Power-up
â Any combination of Blocks can be protected
s COMMON FLASH INTERFACE (CFI)
s 64 bit SECURITY CODE
s ERASE SUSPEND and RESUME MODES
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Top Device Code, M59MR032C: A4h
â Bottom Device Code, M59MR032D: A5h
BGA
µBGA
LFBGA54 (ZC)
10 x 4 ball array
µBGA46 (GC)
10 x 4 ball array
Figure 1. Logic Diagram
VDD VDDQ VPP
5
A16-A20
16
ADQ0-ADQ15
W
E
WAIT
G
M59MR032C
M59MR032D
RP
BINV
WP
L
K
VSS
AI90109
April 2001
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