M58LW064C Datasheet, PDF (1/61 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory

M58LW064C
64 Mbit (4Mb x16, Uniform Block, Burst)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s WIDE x16 DATA BUS for HIGH BANDWIDTH
s SUPPLY VOLTAGE
– V_DD = 2.7 to 3.6V core supply voltage for Pro-
gram, Erase and Read operations
– V_DDQ = 1.8 to V_DD for I/O Buffers
s SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled
Read
– Page Read
s ACCESS TIME
– Synchronous Burst Read up to 56MHz
– Asynchronous Page Mode Read 110/25ns
– Random Read 110ns
s PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
s 64 UNIFORM 64 KWord MEMORY BLOCKS
s BLOCK PROTECTION/ UNPROTECTION
s PROGRAM and ERASE SUSPEND
s 128bit PROTECTION REGISTER
s COMMON FLASH INTERFACE
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW064C : 8820h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA
TBGA64 (ZA)
10 x 13 mm
December 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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