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M58LT256JST Datasheet, PDF (1/106 Pages) STMicroelectronics – 256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories | |||
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M58LT256JST
M58LT256JSB
256 Mbit (16 Mb à 16, multiple bank, multilevel, burst)
1.8 V supply, secure Flash memories
Features
â Supply voltage
â VDD = 1.7 V to 2.0 V for program, erase
and read
â VDDQ = 2.7 V to 3.6 V for I/O Buffers
â VPP = 9 V for fast program
â Synchronous / Asynchronous Read
â Synchronous Burst Read mode: 52 MHz
â Random access: 85 ns
â Asynchronous Page Read mode
â Synchronous Burst Read Suspend
â Programming time
â 5 µs typical Word program time using
Buffer Enhanced Factory Program
command
â Memory organization
â Multiple Bank memory array: 16 Mbit banks
â Parameter Blocks (top or bottom location)
â Dual operations
â program/erase in one Bank while read in
others
â No delay between read and write
operations
â Block protection
â All blocks protected at Power-up
â Any combination of blocks can be protected
with zero latency
â Absolute Write Protection with VPP = VSS
â Security
â Software security features
â 64 bit unique device number
â 2112 bit user programmable OTP Cells
â Common Flash Interface (CFI)
â 100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 x 13 mm
â Electronic signature
â Manufacturer Code: 20h
â Top Device Codes:
M58LT256JST: 885Eh
â Bottom Device Codes
M58LT256JSB: 885Fh
â TBGA64 package
â ECOPACK® compliant
June 2007
Rev 2
1/106
www.st.com
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