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M58LT128HST Datasheet, PDF (1/110 Pages) STMicroelectronics – 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories | |||
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M58LT128HST
M58LT128HSB
128-Mbit (8 Mb Ã16, Multiple Bank, Multilevel interface, Burst)
1.8 V supply, Secure Flash memories
Features
â Supply voltage
â VDD = 1.7 V to 2.0 V for program, erase
and read
â VDDQ = 2.7 V to 3.6 V for I/O buffers
â VPP = 9 V for fast program
â Synchronous / Asynchronous Read
â Synchronous Burst Read mode: 52 MHz
â Asynchronous Page Read mode
â Random Access: 85 ns
â Synchronous Burst Read Suspend
â Programming time
â 2.5 µs typical Word program time using
Buffer Enhanced Factory Program
command
â Memory organization
â Multiple Bank memory array: 8-Mbit Banks
â Parameter Blocks (top or bottom location)
â Dual operations
â program/erase in one Bank while read in
others
â No delay between read and write
operations
â Block protection
â All blocks protected at power-up
â Any combination of blocks can be protected
with zero latency
â Absolute Write Protection with VPP = VSS
â Security
â Software security features
â 64-bit unique device number
â 2112-bit user programmable OTP Cells
â Common Flash Interface (CFI)
â 100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 Ã 13 mm
â Electronic signature
â Manufacturer code: 20h
â Top device codes:
M58LT128HST: 88D6h
â Bottom device codes
M58LT128HSB: 88D7h
â TBGA64 package
â ECOPACK® compliant
March 2007
Rev 1
1/110
www.st.com
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