M58BW016DB Datasheet, PDF (1/69 Pages) STMicroelectronics – 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kb x 32, boot block, burst)
3 V supply Flash memories
Features
■ Supply voltage
– V_DD = 2.7 V to 3.6 V for Program, Erase
and Read
– V_DDQ = V_DDQIN = 2.4 V to 3.6 V for I/O
buffers
– V_PP = 12 V for Fast Program (optional)
■ High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst
Read
– Synchronous Burst Read
– Asynchronous Page Read
■ Hardware block protection
– WP pin for Write Protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for Write Protect of all blocks
■ Optimized for FDI drivers
– Fast Program / Erase Suspend latency
time < 6 µs
– Common Flash interface
■ Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
■ Low power consumption
– 5 µA typical Deep Power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after Asynchronous
Read
■ Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
■ ECOPACK^® packages available
PQFP80 (T)
BGA
LBGA80 10 × 12 mm
October 2007
Rev 14
1/69
www.st.com
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