M39832 Datasheet, PDF (1/36 Pages) STMicroelectronics – Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory

M39832
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and
256 Kbit Parallel EEPROM Memory
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPARATIONS
FLASH ARRAY
– Boot block (Top or Bottom location)
– Parameter and Main blocks
– Selectable x8/x16 Data Bus (BYTE pin).
EEPROM ARRAY
– x8 Data Bus only.
120ns ACCESS TIME
(Flash and EEPROM array)
WRITE, PROGRAM and ERASE STATUS BITS
CONCURRENT MODE (Read Flash while
writing to EEPROM)
100,000 ERASE/WRITE CYCLES
10 YEARS DATA RETENTION
LOW POWER CONSUMPTION
– Stand-by mode: 100µA
– Automatic Stand-by mode
64 bytes ONE TIME PROGRAMMABLE
MEMORY (x8 Data Bus only)
STANDARD EPROM/OTP MEMORY
PACKAGE
EXTENDED TEMPERATURE RANGES
PRELIMINARY DATA
TSOP48 (NE)
12 x 20 mm
Figure 1. Logic Diagram
VCC
19
A0-A18
15
DQ0-DQ14
W
DQ15A–1
DESCRIPTION
The M39832 is a memory device combining Flash
and EEPROM into a single chip and using single
supply voltage. The memory is mapped in two
arrays: 8 Mbit of Flash memory and 256 Kbit of
EEPROM memory. Each space is independant for
writing, in concurrent mode the Flash Memory can
be read while the EEPROM is being written.
An additional 64 bytes of EPROM are One Time
Programmable.
The M39832 EEPROM memory array is organized
in byte only (regardless on the BYTE pin). It may
be written by byte or by page of 64 bytes and the
integrity of the data can be secured with the help
of the Software Data Protection (SDP).
EE
M39832
EF
G
RP
VSS
BYTE
ERB
FRB
AI00844
February 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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