M29W008T Datasheet, PDF (1/30 Pages) STMicroelectronics – 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W008T
M29W008B
8 Mbit (1Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
M29W008T and M29W008B are replaced
respectively by the M29W008AT and
M29W008AB
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
FAST PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W008T: D2h
– Device Code, M29W008B: DCh
DESCRIPTION
The M29W008 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V VCC supply. For
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
NOT FOR NEW DESIGN
TSOP40 (N)
10 x 20 mm
Figure 1. Logic Diagram
VCC
20
A0-A19
8
DQ0-DQ7
W
M29W008T
E
M29W008B
RB
G
RP
VSS
AI02189
June 1999
This is information on a product still in production but not recommended for new designs.
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