M27W801 Datasheet, PDF (1/16 Pages) STMicroelectronics – 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

M27W801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
s 2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME:
– 80ns at V_CC = 3.0V to 3.6V
– 100ns at V_CC = 2.7V to 3.6V
s PIN COMPATIBLE with M27C801
s LOW POWER CONSUMPTION:
– 15µA max Standby Current
– 15mA max Active Current at 5MHz
s PROGRAMMING TIME 50µs/byte
s HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
DESCRIPTION
The M27W801 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 1,048,576 by
8 bits.
The M27W801 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
VCC
20
A0-A19
8
Q0-Q7
E
GVPP
M27W801
VSS
AI02363
April 2000
1/16