IRF830 Datasheet, PDF (1/8 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

®
IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
IRF830
500 V
< 1.5 Ω
4.5 A
s TYPICAL R_DS(on) = 1.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
V_DGR
V_GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
500
± 20
4.5
2.9
I_DM(•) Drain Current (pulsed)
18
P_tot Tot al Dissipation at T_c = 25 ^oC
100
Derating Factor
0.8
dv/dt(1) Peak Diode Recovery voltage slope
3.5
T_stg Storage Temperature
-65 to 150
T_j
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
o_C
o_C
August 1998
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