IRF520 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF520
IRF520FI
V_DSS
100 V
100 V
R _{DS( on)}
< 0.27 Ω
< 0.27 Ω
I_D
10 A
7A
s TYPICAL R_DS(on) = 0.23 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_{D S} Drain-source Voltage (V_GS = 0)
V_{DG R} Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (cont.) at Tc = 25 ^oC
ID
Drain Current (cont.) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1993
Value
I RF 52 0
I RF 520FI
100
100
± 20
10
7
7
5
40
40
70
35
0. 47
0. 23

2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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