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STB95N3LLH6 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STx95N3LLH6
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 30 V
VDS = 30 V,Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
SMD version
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
SMD version
VGS = 4.5 V, ID = 40 A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
2.5 V
0.0037 0.0042 Ω
0.0042 0.0047 Ω
0.0055 0.007 Ω
0.006 0.0075 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 4.5 V
Figure 13
VDD = 15 V, ID = 80 A
Figure 18
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
2200
pF
-
400
- pF
280
pF
20
nC
-
8.2
- nC
7.5
nC
3.4
nC
-
-
6.2
nC
-
1
-
Ω
4/18
Doc ID 15228 Rev 3
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