STB95N3LLH6 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET

STB95N3LLH6, STD95N3LLH6
STP95N3LLH6, STU95N3LLH6
N-channel 30 V, 0.0037 Ω , 80 A, D²PAK, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STB95N3LLH6
STD95N3LLH6
STP95N3LLH6
STU95N3LLH6
V_DSS
30 V
30 V
30 V
30 V
R_DS(on) max
0.0042 Ω
0.0042 Ω
0.0042 Ω
0.0047 Ω
I_D
80 A
80 A
80 A
80 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
3
1
DPAK
3
2
1
IPAK
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order codes
STB95N3LLH6
STD95N3LLH6
STP95N3LLH6
STU95N3LLH6
Marking
95N3LLH6
95N3LLH6
95N3LLH6
95N3LLH6
S(3)
AM01474v1
Package
D²PAK
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tape and reel
Tube
Tube
November 2009
Doc ID 15228 Rev 3
1/18
www.st.com
18