STN80T08 Datasheet, PDF (3/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN80T08
N Channel Enhancement Mode MOSFET
80.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS VGS=0V,ID=250uA
80
VGS(th) VDS=VGS,ID=250uA 2.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
Zero Gate Voltage
Drain Current
IDSS
VDS=60V,VGS=0V
Tj=5℃
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=40A
V
4.0 V
±100 nA
1
30
uA
8 11 mΩ
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
1.1 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=4.5V,VDS=70V
ID≡75A
VDS =30V,VGS=0V
F=1MHz
VDD=30V,RL= 30Ω
VDS=10V,RG=6Ω
80 112
18
nC
27
3350
450
pF
200
25 42
13
23 _nS
75 140
65 125
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1