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| STN80T08 Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN80T08
N Channel Enhancement Mode MOSFET
80.0A
DESCRIPTION
STN80T08 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO220-3L
FEATURE
80V/40.0A, RDS(ON) = 8m⦠(Typ.)
@VGS = 10V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-220 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
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