STN444DN Datasheet, PDF (3/8 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN444DN
N Channel Enhancement Mode MOSFET
100A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS VGS=0V,ID=250uA
30
VGS(th) VDS=VGS,ID=250uA 1.3
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
Zero Gate Voltage
Drain Current
IDSS
VDS=30V,VGS=0V
VDS=30V,VGS=0V
TJ=55℃
V
2.5 V
±100 nA
1
uA
10
Drain-source On-
Resistance
RDS(on)
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=10V,ID=10A
VGS=4.5V,ID=20A
VDS=15V,ID=10A
IS=1.0A,VGS=0V
VDS=15V,VGS=10V
ID≡15A
VDS =15V,VGS=0V
F=1MHz
ID≡1A , VDD=15V,
VGS=10V, RG=3.3V
2.6
3.4
3.3
4.3
mΩ
65
S
1.0 V
60
14
nC
23.5
5850
720
pF
525
20
6.3
nS
125
15.8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN444DN 2016 V1