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| STN444DN Datasheet, PDF (1/8 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN444DN
N Channel Enhancement Mode MOSFET
100A
DESCRIPTION
STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient nigh frequency switching performance. It has been optimized for low gate charge,
low RDS(ON) and fast switching speed.
PIN CONFIGURATION
PowerPAK 5x6L(1212-8)
DD DD
FEATURE
l 30V/30A, RDS(ON) = 2.6mΩï¼Typ.ï¼
@VGS = 10V
l 30V/15A, RDS(ON) = 3.4mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and
maximum DC current capability
l PowerPAK 5x6L(1212-8) package
design
S S SG
Yï¼Year Code
Aï¼Date Code
Bï¼Package Code
Cï¼Wafer Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN444DN 2016 V1
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