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| STN4440 Datasheet, PDF (3/6 Pages) Stanson Technology – STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | |||
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STN4440
N Channel Enhancement Mode MOSFET
5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25â Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS VGS=0V,ID=250uA 60
VGS(th) VDS=VGS,ID=250uA 1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
Zero Gate Voltage
Drain Current
On-State Drain
Current
IDSS
ID(on)
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=5â
VDSâ§5V,VGS=10V
20
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=10A
VGS=4.5V,ID=8A
Forward
Transconductance
gfs
VDS=5V,ID=6.2AV
Diode Forward Voltage VSD
IS=1A,VGS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
IDâ¡5A
VDS ==30V,VGS=0V
F=1MHz
VDD=10V,RL= 6Ω
VDS=30V,RG=3Ω
V
3.0 V
±100 nA
1
5
uA
A
50
mΩ
70
11
S
0.8 1.2 V
9
11
1.6
nC
2.2
450
60
pF
25
5.1 7
2.6
4 nS
16 20
2.5 3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4440 2009. V1
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