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STN4440 Datasheet, PDF (1/6 Pages) Stanson Technology – STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4440
N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION
STN4440 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
� 60V/10.0A, RDS(ON) = 50mΩ (Typ.)
@VGS = 10V
� 60V/8.0A, RDS(ON) = 70mΩ
@VGS = 4.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4440 2009. V1