STN3456 Datasheet, PDF (3/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN3456
N Channel Enhancement Mode MOSFET
6.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
gfs
VSD
Qg
Qgs
Qgd
Ciss
Condition
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=1.0V
VDS=24V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-10V
VGS=10V,ID=6.0A
VGS=4.5V,ID=5.0A
VDS=4.5V,ID=5.4A
IS=1.7A,VGS=0V
VDS=15V,VGS=10V,
VDS=6.7A
Min Typ Max Unit
30
V
1.0
3.0 V
±100 nA
1
uA
10
10
A
0.030 0.040
0.040 0.050 ^Ω
12
S
0.8 1.2 V
10
18
1.6
nC
3.2
450
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Coss
Crss
Td(on)
tr
Td(off)
tf
VDS=15V,VGS=0,
f=1MHz
VDD=15V,
RL=15Ω, VGEN=10V
RG=6Ω
240
pF
38
7 15
10 20 ns
20 40
11 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3456 2008. V1