STN3456 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN3456
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The STN3456 is the N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
FEATURE
◆ 30V/6.0A, RDS(ON)=40mΩ@VGS=10V
◆ 30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V
◆ Super high density cell design for extremely low
RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
Y: Year Code
W: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN3456ST6RG
TSOP-6
56YW
※ Week Code Code : A ~ Z ; a ~ z
※ STN3456ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3456 2008. V1