STC6602 Datasheet, PDF (3/8 Pages) Stanson Technology – Dual N&P Channel Enhancement Mode MOSFET

STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
N
30
p -30
N
1
P
1
N
p
V
3
V
-3
±100 nA
±100
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VSD
VDS=30V,VGS=0V
VDS=-30V,VGS=0V
VDS=30V,VGS=0V
TJ=55℃
VDS=-30V,VGS=0V
TJ=55℃
VDS≦5V,VGS=10V
VDS≦-5V,VGS=-10V
VGS=10V,ID=2.8A
VGS=-10V,ID=-2.8A
VGS=4.5V,ID=2.3A
VGS=-4.5V,ID=-2.5A
VDS=10V,ID=2.8A
VDS=-10V,ID=-2.8A
IS=1.25A,VGS=0V
IS=-1.2A,VGS=0V
N
1
P
-1 uA
N
10
P
-10
6
A
-6
0.043 0.060
0.088 0.105 Ω
0.056 0.080
0.118 0.135
4.6
S
-4
0.8 1.2 V
-0.8 -1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
N
VDS=15V,VGS=4.5V,
P
Qgs
VDS=2.0A
N
P-channel
P
Qgd
VDS=-15V,VGS=-4.5V,
N
VDS=-2.0A
P
4.5 10
5.8 10
nC
0.8
0.8
1.0
1.5
Turn-On Time
Turn-Off Time
Td(on)
tr
Td(off)
tf
N
N-Channel
P
VDD=15V, RL=10Ω,
N
VGEN=10V, RG=3Ω
P
P-Channel
N
VDD=-15V, RL=15Ω,
P
VGEN=-10V, RG=3Ω
N
P
8 20
9 20 nS
12 30
9
20
17 35
18 35
8
20
6
20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1