STC6602 Datasheet, PDF (2/8 Pages) Stanson Technology – Dual N&P Channel Enhancement Mode MOSFET

STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
N
P
30
-30
Unit
V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous Drain Current
(TJ=150℃ )
Pulsed Drain Current
TA=25℃
TA=70℃
ID
IDM
2.8
-2.8
A
2.3
-2.1
10
-8
A
Continuous Source Current (Diode Conduction)
IS
1.25
-1.4
A
Power Dissipation
TA=25℃
PD
TA=70℃
Operation Junction Temperature
TJ
1.15
W
0.75
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction T≦10sec
50
to Ambient
RθJA
Steady State
90
52
℃ /W
90
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1