STC4614 Datasheet, PDF (3/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4614
N&P Pair Enhancement Mode MOSFET
10.0A / -10.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
40
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA N 1.0
VDS=VGS,ID=-250uA P -1.0
3.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
±100
±100 ^nA
VDS=32V,VGS=0V N
1
Zero Gate Voltage Drain
Current
IDSS
VDS=-32V,VGS=0V P
TJ=55℃ VDS=32V,VGS=0V N
-1
5 uA
VDS=-32V,VGS=0V P
-5
On-State Drain Current
ID(on)
VDS≧5V,VGS=10V N 20
VDS≦-5V,VGS=-10V ^{P -20}
A
VGS=10V, ID=10.0A N
0.025 0.030
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-10.0A P
VGS=4.5V, ID=6.0A N
0.035 0.043 _Ω
0.030 0.037
VGS=-4.5V,ID=-5.0 A P
0.043 0.052
Forward Tran Conductance
gfs
VDS=5V,ID=6.9A N
VDS=-15V,ID=-5.9A P
22
13
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V N
IS=-1.7A,VGS=0V P
1.2
-1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
N-Channel
N
VDS=20V,VGS=10V P
ID≡6.0A
N
P-Channel
P
VDS=-20V,VGS=-10V N
ID≡-5.0A
P
N-Channel
N
VDS=20V,RL=3.3Ω P
ID=1A,RGEN=3Ω N
P
P-Channel
N
VDS=-20V,RL=4.0Ω P
ID=-1A,RGEN=-3Ω N
P
8.3 10.0
13.6 15.0
1.3 2.0
1.8 2.5 nC
2.3 3.0
4.0 5.0
4.6 6.0
7.7 11.5
3.1 4
6.7 9
15.6 21 ^nS
26.2 34
3.0 4.0
11.2 15
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4614 2008. V1