STC4614 Datasheet, PDF (1/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4614
N&P Pair Enhancement Mode MOSFET
10.0A / -10.0A
DESCRIPTION
The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
PART MARKING
FEATURE
N-Channel
40V/10.0A, RDS(ON) = 25mR(Typ.)
@VGS = 10V
40V/6.0A, RDS(ON) = 32mΩ
@VGS = 4.5V
P-Channel
-40V/-10.0A, RDS(ON) = 37mΩ(Typ.)
@VGS = -10V
-40V/-5.0A, RDS(ON)= 43mΩ
@VGS = - 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package
Y∶Year A∶Product code
ORDERING INFORMATION
Part Number
Package
Part Marking
STC4614S8RG
SOP-8
STC4614
STC4614S8TG
SOP-8
STC4614
※ Process Code : A ~ Z ; a ~ z
※ STC4614S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STC4614S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4614 2008. V1