STC4606 Datasheet, PDF (3/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4606
N&P Pair Enhancement Mode MOSFET
6.5A / -6.9A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
N
P
30
-30
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA N
VDS=VGS,ID=-250uA P
0.8
-1.0
1.8
-2.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
±100
±100 ^nA
VDS=24V,VGS=0V N
1
Zero Gate Voltage Drain
Current
IDSS
VDS=-24V,VGS=0V P
TJ=55℃ V_DS=24V,V_GS=0V N
-1
5 uA
VDS=-24V,VGS=0V P
-5
On-State Drain Current
ID(on)
VDS≧5V,VGS=10V N 26
VDS≦-5V,VGS=-10V ^{P -30}
A
Drain-source On-Resistance
RDS(on)
VGS=10V, ID=6.9A N
VGS=-10V,ID=-6.0A P
VGS=4.5V, ID=5.0A N
VGS=-4.5V,ID=-5.0 A P
0.030 0.040
0.041 0.056 _Ω
0.046 0.055
0.060 0.072
Forward Tran Conductance
gfs
VDS=5V,ID=6.9A N
VDS=-15V,ID=-5.9A P
15
13
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V N
IS=-1.7A,VGS=0V P
0.7 1.0
-0.7. -1.0
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
N-Channel
N
VDS=15V,VGS=10V P
ID≡6.9A
N
P-Channel
P
VDS=-15V,VGS=-10V N
ID≡5.0A
P
N-Channel
N
VDS=10V,RL=2.2Ω P
ID=1A,VGEN=10V N
RG=3Ω
P
P-Channel
N
VDS=-10V,RL=2.7Ω P
ID=-1A,VGEN=-3V N
RG=2.7Ω
P
13.8 16.6
18.5 22.2
1.8
2.7
nC
2.0
4.5
4.6 7
7.7 11.5
4.1 6
5.7 8.5
20.6 30
nS
20.2 30
5.2 8
9.5 14
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4606 2008. V1