STC4606 Datasheet, PDF (1/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4606
N&P Pair Enhancement Mode MOSFET
6.5A / -6.9A
DESCRIPTION
The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
N-Channel
30V/6.9A, RDS(ON) = 30mΩ（Typ）
@VGS = 10V
30V/6.0A, RDS(ON) = 46mΩ
@VGS = 4.5V
P-Channel
-30V/-6.0A, RDS(ON) = 41mΩ（Typ）
@VGS = -10V
-30V/-5.0A, RDS(ON)= 60mΩ
@VGS = - 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package
Y∶Year A∶Date Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4606 2008. V1