STC4567 Datasheet, PDF (3/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4567
N&P Pair Enhancement Mode MOSFET
10A / -10A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
40
-40
V
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,ID=250 uA N
VDS=VGS,ID=-250uA P
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
0.5
-0.8
1.0
-2.5
V
±100
±100 ^nA
Zero Gate Voltage Drain
Current
VDS=36V,VGS=0V N
IDSS
VDS=-36V,VGS=0V P
TJ=55℃ V_DS=32V,V_GS=0V N
1
-1
5 uA
On-State Drain Current
ID(on)
VDS=-32V,VGS=0V P
VDS≧5V,VGS=10V N 10
VDS≦-5V,VGS=-10V ^{P -10}
-5
A
VGS=10V, ID=6.0A N
0.048
Drain-source On-Resistance RDS(on)
VGS=-10V,ID=-7.2A P
VGS=4.5V, ID=5.0A N
0.093
0.058
Ω
VGS=-4.5V,ID=-5.0 A P
0.103
Forward Tran Conductance
gfs
VDS=15V,ID=6.9A N
VDS=-15V,ID=-5.9A P
22
13
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V N
IS=-1.7A,VGS=0V P
1.2
-1.0
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
N-Channel
N
VDS=15V,VGS=10V P
ID≣2.0A
N
P-Channel
P
VDS=-15V,VGS=-10V N
ID≣-3.5A
P
N-Channel
N
VDS=15V,RL=15Ω ^P
ID=1A,RGEN=6Ω
N
VGEN=10V
P-Channel
P
N
VDS=-15V,RL=15Ω ^P
ID=-1A,RGEN=-6Ω N
VGEN=10V
P
16 24
9 12
3
1.5
nC
2.3
2.0
4.6 6.0
8 20
3.1 4
10 20
15.6 21 nS
30 34
3.0 4.0
25 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1