STC4567 Datasheet, PDF (1/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4567
N&P Pair Enhancement Mode MOSFET
10A / -10A
DESCRIPTION
The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
FEATURE
N-Channel
z 40V/6.0A, RDS(ON) = 48mΩ (Typ.)
@VGS = 10V
z 40V/5.0A, RDS(ON) = 63mΩ
@VGS = 4.5V
PART MARKING
P-Channel
z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.)
@VGS = -10V
z -40V/-5.0A, RDS(ON)= 103mΩ
@VGS = - 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package
Y∶Year A∶Product code
ORDERING INFORMATION
Part Number
Package
Part Marking
STC4567S8RG
SOP-8
STC4567
※ Process Code : A ~ Z ; a ~ z
※ STC4567S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1