STC4539 Datasheet, PDF (3/10 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
N 30
P -30
V
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,ID=250 uA N 1.0
VDS=VGS,ID=-250uA P -1.0
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
3.0
-3.0
V
±100
±100
nA
Zero Gate Voltage Drain
Current
VDS=24V,VGS=0V N
IDSS
VDS=-24V,VGS=0V P
TJ=55℃ V_DS=24V,V_GS=0V N
1
-1
5 uA
On-State Drain Current
ID(on)
VDS=-24V,VGS=0V P
VDS≧5V,VGS=10V N 30
VDS≦-5V,VGS=-10V ^{P -30}
-5
A
Drain-source On-Resistance RDS(on)
VGS=10V, ID=6.8A N
VGS=-10V,ID=-5.7A P
VGS=4.5V, ID=5.6A N
VGS=-4.5V,ID=-4.4A P
0.026 0.034
0.045 0.060 _Ω
0.036 0.045
0.060 0.080
Forward Tran Conductance
gfs
VDS=15V,ID=5.9A N
VDS=-15V,ID=-5.9A P
15
9
S
Diode Forward Voltage
VSD
IS=1.7A,VGS=0V N
IS=-1.7A,VGS=0V P
0.8 1.2
-0.8 -1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
N-Channel
N
VDS=15V,VGS=10V P
ID≣5.9A
N
P-Channel
P
VDS=-15V,VGS=-10V N
ID≣5.0A
P
N-Channel
N
VDD=15V,RL=150Ω P
ID=1A,VGEN=10V N
RG=6Ω
P
P-Channel
N
VDD=-15V,RL=150Ω P
ID=-1A,VGEN=-10V N
RG=6Ω
P
13 20
15 25
2.3
4.0
nC
2.0
2.0
6.0 12
7.0 15
14 25
10 20
30 60 ^nS
40 80
5 10
20 40
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1