STC4539 Datasheet, PDF (1/10 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
DESCRIPTION
The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
FEATURE
PART MARKING
SOP-8
N-Channel
z 30V/6.8A, RDS(ON) = 34mΩ
@VGS = 10V
z 30V/5.6A, RDS(ON) = 46mΩ
@VGS = 4.5V
P-Channel
z -30V/-6.2A, RDS(ON) = 60mΩ
@VGS = -10V
z -30V/-4.6A, RDS(ON)= 80mΩ
@VGS = - 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package
ORDERING INFORMATION
Part Number
Package
Part Marking
STC4539S8RG
SOP-8
STC4539
STC4539S8TG
SOP-8
STC4539
※ Process Code : A ~ Z ; a ~ z
※ STC4539S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STC4539S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1