STC4301D Datasheet, PDF (3/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4301D
N&P Pair Enhancement Mode MOSFET
23.0A / -20.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
40
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA N
VDS=VGS,ID=-250uA P
1.0
-1.0
2.5
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
±100
±100 ^nA
Zero Gate Voltage Drain
Current
IDSS
TJ=25℃
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
TJ=55℃
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
1
-1
5 uA
-5
VGS=10V, ID=10.0A N
0.025 0.032
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-10.0A P
VGS=4.5V, ID=6.0A N
0.035 0.043 _Ω
0.030 0.037
VGS=-4.5V,ID=-5.0 A P
0.040 0.065
Forward Tran Conductance
gfs
VDS=5V,ID=12.0A N
VDS=-5V,ID=-8.0A P
8
12.6
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V N
IS=-1.0A,VGS=0V P
1.2
-1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
N-Channel
N
VDS=20V,VGS=4.5V P
5.5
9
ID≡12.0A
Qgs
N
P-Channel
P
1.25
2.54
nC
Qgd
VDS=-20V,VGS=-4.5V _N
ID≡-12.0A
P
2.5
3.1
N-Channel
N
8.9
td(on)
VDS=20V,RG=3.3Ω P
18.7
tr
ID=1A,VGS=10V N
2.2
P
P-Channel
N
12.7
15.6
nS
td(off) ^{VDS=-20V,RG=3.3Ω P}
30.2
tf
ID=-1A,RGS=-10V N
3.0
P
15
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4301D 2017. V1