STC4301D Datasheet, PDF (2/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC4301D
N&P Pair Enhancement Mode MOSFET
23.0A / -20.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Typical
N
P
40
-40
±20
±20
Unit
V
V
Continuous Drain Current
TA=25℃
TA=70℃
ID
23.0
18.0
-20.0
-16.0
A
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
IDM
IS
PD
TJ
TSTG
RθJA
40
-46
18
-27.5
25
31.5
150
-55/150
62.5
62.5
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4301D 2017. V1