ST2304SRG Datasheet, PDF (3/6 Pages) Stanson Technology – ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2304SRG
N Channel Enhancement Mode MOSFET
3.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS=0V,ID=250uA 30
V
VDS=VGS,ID=250uA 1.0
3.0 V
VDS=0V,VGS=±20V
±100 nA
VDS=30V,VGS=1.0V
1
VDS=30V,VGS=0V
TJ=55℃
10 ^uA
VDS≧4.5V,VGS=10V 6
VDS≧4.5V,VGS=4.5V ⁴
A
VGS=10V,ID=3.2A
VGS=4.5V,ID=2.0A
VGS=2.5V,ID=1.5A
0.044 0.052
0.060 0.067 Ω
0.090 0.100
VDS=4.5V,ID=2.5V
4.6
S
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD
IS=1.25A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V
VGS=10V
ID≡2.5A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
1.2 V
4.5 10
0.8
nC
1.0
240
110
pF
17
8.0 20
12 30
nS
17 35
8.0 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2304SRG 2005. V1