ST2304SRG Datasheet, PDF(1/6 Page) Stanson Technology – ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

ST2304SRG Datasheet, PDF (1/6 Pages) Stanson Technology – ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2304SRG

N Channel Enhancement Mode MOSFET

3.2A

DESCRIPTION

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

FEATURE

30V/3.2A, RDS(ON) = 44m-ohm (Typ.)

@VGS = 10.0V

30V/2.0A, RDS(ON) = 60m-ohm

@VGS = 4.5V

30V/1.5A, RDS(ON) =90 m-ohm

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

04YA

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2304SRG

SOT-23

04YA

â» Process Code : A ~ Z ; a ~ z

â» ST2304SRG S : SOT-23 ; R : Tape Reel ; G : Pb â Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2304SRG 2005. V1

▷