STN2018 Datasheet, PDF (2/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN2018
N Channel Enhancement Mode MOSFET
10.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
VGSS
ID
IDM
IS
PD
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
20
±12
10.0
8.0
35
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp
.
STN2018 2013. V1