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| STN2018 Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN2018
N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
STN2018 is the N-Channel logic enhancement mode power field effect transistors
which are produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notbook computer
power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
20V/10A, RDS(ON) = 10mΩ
@VGS = 4.5V
20V/7A, RDS(ON) = 15mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp
.
STN2018 2013. V1
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