ST1413A Datasheet, PDF (2/7 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST1413A
P Channel Enhancement Mode MOSFET
-3.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
-20
±12
-3.4
-2.0
-7
-1.6
1.25
0.8
150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST1413A 2005. V1