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| ST1413A Datasheet, PDF (1/7 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET | |||
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ST1413A
P Channel Enhancement Mode MOSFET
-3.4A
DESCRIPTION
ST1413A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in a
very small outline surface mount package.
PIN CONFIGURATION
SOT-353 ( SC-70-5L )
FEATURE
-20V/-3.4A, RDS(ON) = 130mâ¦
@VGS = -4.5V
-20V/-2.0A, RDS(ON) = 150mâ¦
@VGS = -2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-353 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST1413A 2005. V1
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