CGA-6618 Datasheet, PDF (2/5 Pages) Stanford Microdevices – DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER

Preliminary
CGA-6618 Dual GaAs HBT Amplifier
Typical S-Parameters @ V_S=8V, I_D=160mA, R_BIAS=39 Ohms, T_L=+25°C
-5
-10
-15
-20
-25
0
Gain vs. Frequency
15
13
11
9
7
5
0
200
Output Return Loss vs. Frequency
-40C
25C
85C
-40C
25C
85C
400 600
Frequency (MHz)
-5
800 1000
Input Return Loss vs. Frequency
-10
-15
200
400
600
800
1000
Frequency (MHz)
-20
-25
0
-40C
25C
85C
200
400
600
800
1000
Frequency (MHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (I_D)
Max. RF Input Power
240 mA
+16 dBm
Max. Junction Temp. (T_J)
Operating Temp. Range (T_L)
Max. Storage Temp.
+150ºC
-40ºC to +85ºC
+150ºC
Operation of this device beyond any of these limits
may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I_DV_D (max) < (T_J - T_L)/R_th,j-l
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101994 Rev B