SST39VF800Q Datasheet, PDF (7/23 Pages) Silicon Storage Technology, Inc – 8 Megabit (512K x 16-Bit) Multi-Purpose Flash

8 Megabit Multi-Purpose Flash
SST39VF800Q / SST39VF800
Advance Information
TABLE 6: SYSTEM INTERFACE INFORMATION
Address
Data
Data
1BH
0027H
VDD Min. (Program/Erase)
1
DQ7-DQ4: Volts, DQ3-DQ0: millivolts
1CH
0036H
VDD Max. (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: millivolts
2
1DH
0000H
VPP min. (00H = no VPP pin)
1EH
0000H
VPP max. (00H = no VPP pin)
1FH
0004H
Typical time out for Word Program 2^N µs (2⁴ = 16 µs)
3
20H
0000H
Typical time out for min. size buffer program 2^N µs (00H = not supported)
21H
0004H
Typical time out for individual Sector/Block Erase 2^N ms (2⁴ = 16 ms)
4
22H
0006H
Typical time out for Chip Erase 2^N ms (2⁶ = 64 ms)
23H
0001H
Maximum time out for Word Program 2^N times typical (2¹ x 2⁴ = 32 µs)
24H
0000H
Maximum time out for buffer program 2^N times typical
5
25H
0001H
Maximum time out for individual Sector/Block Erase 2^N times typical
(2¹ x 2⁴ = 32 ms)
6
26H
0001H
Maximum time out for Chip Erase 2^N times typical (2¹ x 2⁶ = 128 ms)
343 PGM T6.2
7
TABLE 7: DEVICE GEOMETRY INFORMATION
Address
Data
Data
8
27H
0014H
Device size = 2^N Bytes (14H = 20; 2²⁰ = 1M Bytes)
28H
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
9
29H
0000H
2AH
0000H
Maximum number of byte in multi-byte write = 2^N (00H = not supported)
2BH
0000H
10
2CH
0002H
Number of Erase Sector/Block sizes supported by device
2DH
00FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
2EH
0000H
y = 255 + 1 = 256 sectors (00FFH = 255)
11
2FH
0010H
30H
0000H
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
31H
000FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
12
32H
0000H
y = 15 + 1 = 16 blocks (000FH = 15)
33H
0000H
34H
0001H
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
13
343 PGM T7.2
14
15
16
© 1999 Silicon Storage Technology, Inc.
7
343-04 2/99