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| SST25VF020B Datasheet, PDF (23/33 Pages) Silicon Storage Technology, Inc – 2 Mbit SPI Serial Flash | |||
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2 Mbit SPI Serial Flash
SST25VF020B
ELECTRICAL SPECIFICATIONS
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under âAbsolute Maximum
Stress Ratingsâ may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temp
0°C to +70°C
-40°C to +85°C
VDD
2.7-3.6V
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 29 and 30
TABLE 9: DC Operating Characteristics
Limits
Symbol
IDDR
IDDR3
IDDW
ISB
ILI
ILO
VIL
VIH
VOL
VOL2
VOH
Parameter
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Min
0.7 VDD
VDD-0.2
Max
12
20
30
20
1
1
0.8
0.2
0.4
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
Test Conditions
CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open
CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
CE#=VDD
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOL=1.6 mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
T9.0 1417
TABLE 10: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
VDD Min to Read Operation
10
µs
TPU-WRITE1
VDD Min to Write Operation
10
µs
T10.0 1417
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2010 Silicon Storage Technology, Inc.
23
S71417-02-000
04/10
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