SST39VF1601C Datasheet, PDF (20/39 Pages) Silicon Storage Technology, Inc – 16 Mbit (x16) Multi-Purpose Flash Plus

A Microchip Technology Company
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
AC Characteristics
Data Sheet
Table 17:Read Cycle Timing Parameters V_DD = 2.7-3.6V
Symbol Parameter
Min
Max
Units
T_RC
Read Cycle Time
70
ns
T_CE
Chip Enable Access Time
70
ns
T_AA
Address Access Time
70
ns
T_OE
Output Enable Access Time
35
ns
T_CLZ1
CE# Low to Active Output
0
ns
T_OLZ1
T_CHZ1
OE# Low to Active Output
CE# High to High-Z Output
0
ns
20
ns
T_OHZ1 OE# High to High-Z Output
20
ns
T_OH1
Output Hold from Address Change
0
ns
T_RP1
RST# Pulse Width
500
ns
T_RHR1 RST# High before Read
50
ns
T_RY1,2 RST# Pin Low to Read Mode
20
µs
T17.3 25018
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-
Erase operations.
Table 18:Program/Erase Cycle Timing Parameters
Symbol Parameter
Min
Max
Units
T_BP
Word-Program Time
10
µs
T_AS
Address Setup Time
0
ns
T_AH
Address Hold Time
30
ns
T_CS
WE# and CE# Setup Time
0
ns
T_CH
WE# and CE# Hold Time
0
ns
T_OES OE# High Setup Time
0
ns
T_OEH OE# High Hold Time
10
ns
T_CP
CE# Pulse Width
40
ns
T_WP
T_WPH1
T_CPH1
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
40
ns
30
ns
30
ns
T_DS
T_DH1
T_IDA1
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
30
ns
0
ns
150
ns
T_SE
Sector-Erase
25
ms
T_BE
Block-Erase
25
ms
T_SCE
T_BY1,2
T_BR1
Chip-Erase
RY/BY# Delay Time
Bus Recovery Time
50
ms
90
ns
0
µs
T18.1 25018
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
©2011 Silicon Storage Technology, Inc.
20
DS-25018A
05/11