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SST34HF3244C Datasheet, PDF (19/40 Pages) Silicon Storage Technology, Inc – 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory
32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory
SST34HF3244C
Data Sheet
TABLE 11: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Write Operation
100
µs
100
µs
T11.0 1282
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
20 pF
CIN1
Input Capacitance
VIN = 0V
16 pF
T12.0 1282
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: Flash Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
TDR1
Endurance
Data Retention
10,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T13.0 1282
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
19
S71282-02-000
8/06