SST34HF3244 Datasheet, PDF (18/41 Pages) Silicon Storage Technology, Inc – 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory

32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
SST34HF3244 / SST34HF3282 / SST34HF3284
Data Sheet
TABLE 10: DC Operating Characteristics (V_DD = V_DDF and V_DDS = 2.7-3.3V)
Limits
Symbol Parameter
Min
I_DD1
Active V_DD Current
I_SB
I_RT
I_LI
I_LIW
I_LO
V_IL
V_ILC
V_IH
V_IHC
V_OLF
V_OHF
V_OLS
V_OHS
Read
Flash
PSRAM
Concurrent Operation
Write²
Flash
PSRAM
Standby V_DD Current
Reset V_DD Current
Input Leakage Current
Input Leakage Current
on WP# pin and RST# pin
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
PSRAM Output Low Voltage
PSRAM Output High Voltage
0.7 V_DD
V_DD-0.3
V_DD-0.2
2.2
1. Address input = V_ILT/V_IHT, V_DD=V_DD Max (See Figure 20)
2. I_DD active while Erase or Program is in progress.
Max
35
30
60
40
30
115
30
1
10
10
0.8
0.3
0.2
0.4
Units
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Test Conditions
Address input = V_ILT/V_IHT, at f=5 MHz,
V_DD=V_DD Max, all DQs open
OE#=V_IL, WE#=V_IH
BEF#=V_IL, BES1#=V_IH, or BES2=V_IL
BEF#=V_IH, BES1#=V_{IL ,} BES2=V_IH
BEF#=V_IH, BES1#=V_{IL ,} BES2=V_IH
WE#=V_IL
BEF#=V_IL, BES1#=V_IH, or BES2=V_IL, OE#=V_IH
BEF#=V_IH, BES1#=V_{IL ,} BES2=V_IH
V_DD = V_DD Max, BEF#=BES1#=V_IHC, BES2=V_ILC
RST#=GND
V_IN=GND to V_DD, V_DD=V_DD Max
WP#=GND to V_DD, V_DD=V_DD Max
RST#=GND to V_DD, V_DD=V_DD Max
V_OUT=GND to V_DD, V_DD=V_DD Max
V_DD=V_DD Min
V_DD=V_DD Max
V_DD=V_DD Max
V_DD=V_DD Max
I_OL=100 µA, V_DD=V_DD Min
I_OH=-100 µA, V_DD=V_DD Min
IOL =1 mA, V_DD=V_DD Min
IOH =-500 µA, V_DD=V_DD Min
T10.0 1335
©2006 Silicon Storage Technology, Inc.
18
S71335-00-000
8/06